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| MA4E2037, MA4E2039,MA4E2040 GaAs Beam Lead Schottky Diodes Features * * * * * Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation Multiple Configurations Rev. V2 MA4E2037 Description and Applications M/A-Com's MA4E2037 single, MA4E2039 anti-parallel pair and MA4E2040 series tee are gallium arsenide beam lead Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The high carrier mobility of gallium arsenide results in lower series resistance than a silicon Schottky with equivalent capacitance, resulting in lower noise figure and conversion loss. The diodes are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coatings prevent damage to the junction and the anode air bridge during handling. Applications The high cut-off frequency of these diodes allows use through low millimeter wave frequencies. Typical applications include single and double balanced mixers in PCN transceivers and radios, automotive radar systems and police radar detectors. MA4E2039 MA4E2040 The MA4E2039 anti-parallel pair is designed for use in sub harmonically pumped mixers. Close matching of the diode characteristics in high LO suppression at the RF input. Notes : ( Unless otherwise specified ) 1. Dimensions are in mm (inches). 2. Views are with junction side up. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 * Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, * India Tel: +91.80.43537383 * China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4E2037, MA4E2039,MA4E2040 GaAs Beam Lead Schottky Diodes Rev. V2 Electrical Specifications @ + 25 C (Measured as Single Diodes) Parameters and Test Conditions Symbol Units Min. MA4E2037 Typ. .020 .030 .045 .060 .0303 Max. Min. MA4E2039 Typ. .0203 .0453 .005 .0603 .010 7 .80 .010 Max. Junction Capacitance at 0V at 1 MHz Total Capacitance at 0V at 1 MHz1 Junction Capacitance Difference Series Resistance at +10mA Forward Voltage at +1mA Forward Voltage Difference at 1mA Reverse Breakdown Voltage at -10uA 2 Cj Ct DCj Rs Vf1 DVf Vbr pF pF pF Ohms Volts Volts Volts 4.5 .60 4 .70 7 .80 .60 4 .70 .005 7 Parameters and Test Conditions Symbol Units Min. MA4E2040 Typ. .020 .030 3 3 Max. Junction Capacitance at 0V at 1 MHz Total Capacitance at 0V at 1 MHz Junction Capacitance Difference Series Resistance at +10mA2 Forward Voltage at +1mA Forward Voltage Difference at 1mA Reverse Breakdown Voltage at -10uA 1 Cj Ct DCj Rs Vf1 DVf Vbr pF pF pF Ohms Volts Volts Volts 4.5 .60 .0453 .005 4 .70 .005 7 .0603 .010 7 .80 .010 Notes: 1. Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance Cp. 2. Series resistance is determined by measuring the dynamic resistance and subtracting the junction resistance of 2.6 ohms. 3. Capacitance for the MA4E2039 and MA4E2040 is per Schottky diode. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 * Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, * India Tel: +91.80.43537383 * China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4E2037, MA4E2039,MA4E2040 GaAs Beam Lead Schottky Diodes Rev. V2 Forward Current vs Temperature 100.00 Forward Current (mA) 10.00 1.00 0.10 0.01 0.00 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 Forward Voltage (V) +125C 25C - 50C Absolute Maximum Ratings 1 Parameter Operating Temperature Storage Temperature Incident LO Power Incident RF Power Mounting Temperature Electrostatic Discharge ( ESD ) Classification 2 Absolute Maximum -65 C to +125 C -65 C to +150 C +20 dBm +20 dBm . +235C for 10 seconds Class 0 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Human Body Model 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 * Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, * India Tel: +91.80.43537383 * China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4E2037, MA4E2039,MA4E2040 GaAs Beam Lead Schottky Diodes Rev. V2 Handling Procedures The following precautions should be observed to avoid damaging these chips: Cleanliness: The chips should be handled in a clean environment. Do not attempt to clean die after installation. Static Sensitivity: Schottky barrier diodes are ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be used when handling these devices. General Handling: The protective polymer coating on the active areas of these die provides scratch protection, particularly for the metal air bridge which contacts the anode. Beam lead devices must, however, must be handled with care since the leads may be easily distorted or broken by the normal pressures exerted when handled by tweezers. A vacuum pencil with a # 27 tip is recommended for picking and placing. Mounting Techniques These devices are designed to be inserted onto hard or soft substrates. Recommended methods of attachment include thermo-compression bonding, parallel- gap welding, solder reflow and conductive epoxy. See application note M541, " Bonding and Handling Procedures for Chip Diode Devices " for detailed instructions. 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 * Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, * India Tel: +91.80.43537383 * China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. |
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